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2" wafers(110)
Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 2SP,R:>50 ohm.cm
Specification
• Growing Method: CZ • Orientation: (110) +/_0.5 Deg. • Wafer Size: 2" dia x 500 microns • Surface Polishing: both sides optical polished • Surface finish (RMS or Ra) : < 30A • Doping: Undoped • Conductor type: N-type • EPD: < 5E2 /cm^2 • Package: under 1000 class clean room
Typical Properties
- • Structure: Cubic, a = 5.6754 Å
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
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