2" dia. wafer InGaAs EPI on InP (Semi-insulating)(100) by MOCVD deposition
Substrate
InP Orientation
(100)
Doped with Fe, Semi-Insulating
wafer Size
2" diameter
Resistivity
> 1 x 107 ohm.cm
EPD
< 1 x 104 /cm2
EPI Film
•Lattice matched In/Ga alloy layer of N-type InGaAs(Si-doped), •Nc > 2 x 1018 /cc •Film Thickness :0.5 um (+/- 20%) •Both Sides polished •Roughness of epi-layer is close to 1 mono-layer (ML) •One the back side we can expect some deposits and we can't guarantee the same quality (roughness) as in the case of active layer surface.
