2" dia. wafer GaAs/AlGaAs EPI on GaAs undoped (Semi-insulating)(100) by MOCVD deposition
Substrate
GaAs Orientation
(100)
Undoped, Semi-Insulating
wafer Size
2" diameter
Resistivity
>1 x 107 ohm.cm
One side Epi-ready polished, back side : etched
EPD
< 1 x 104 /cm2
EPI Film
•Layer 1: 1.0 um th, Lattice matched Al/Ga alloy layer of n-type Al(x)Ga(1-x)As [100] with x > 20% (please specify when ordering), •(Top) Layer 2: 130 nm, n-type GaAs:Si[100], Nc: (0.1-1)x1018 /cc [ Si as dopant ] •One the back side we can expect some deposits and we can't guarantee the same quality (roughness) as in the case of active layer surface. •EPI ready surface and packing
