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Si+SiO2 +Ti+Pt Polycrystalline
SiO2+Ti+Pt thin film on Si substrate ,10x5x0.5mm,1sp,B-doped,( SiO2=500nm,Ti=50nm ,Pt=200nm)
Silicon Wafer Specifications
- • Conductive type: SiO2+Ti+Pt thin film on Si(B-doped)
substrate ,10x5x0.5mm,1sp
( SiO2=500nm,Ti=50nm ,Pt=200nm) - • Resistivity: <0.005 ohm.cm
- • Size: 10x5 x 0.5 mm
- • Polish: one side polished
- • Surface roughness: < 5A, RMS
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