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GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (1.0-1.1) x 10^18 /cm^3

GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (1.0-1.1) x 10^18 /cm^3

기본 정보
Product Name GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (1.0-1.1) x 10^18 /cm^3
Sale Price Call for Price
Product Code GASia50D05C2-VGF-US
Quantity 수량증가수량감소
상품 옵션
 
  •  GaAs single crystal wafer
  • Growing Method
  • VGF
  • Orientation
  • (100)
  • Size
  • 2" dia x 0.5mm
  • Polishing
  • two sides polished
  • Doping
  • Si doped
  • Conductor type
  • S-C-N
  • Carrier Concentration
  • (1.0-1.1) x 10^18 /cm^3
  • Mobility
  • 2270-2370 cm^2/V.S
  • Resistivity
  • (2.5-2.6) E-3 ohm.cm
  • EPD
  • < 5000cm^2
  • Ra(Average Roughness)
  • < 0.4 nm
  • EPI ready surface and packing
 
  

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