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Mg-doped P-type GaN (0001) Epitaxial Template on Sapphire 2"x 2 micron,1sp 
- Mg- doped GaN Epitxial Template on sapphire is made by MOCVD -based method.
- Mg-doped P-type GaN Epitaxial Template on sapphire, Prime Grade
- GaN Thickness
- 2.00 um +/- 10%
- Substrate Sapphire .Orientation c-Axis (0001) off angle 0.2O±0.1 @ M-plane
- Carrier Concentration
- 1 x 1017 ~ 3 x 1018/cm3
- FWHM of RC for (002)
- ~~ 350 arcsec
- FWHM of RC for (102)
- ~~ 450 arcsec
- Front surface
- Ga-face, as grown
- Substrate
- c-plane sapphire, SSP
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