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Si-doped GaN (0001) Epitaxial Template on Sapphire N-type, 2"x 4.5 micron,1sp 
- Si- doped GaN Epitxial Template on saphhire is made by MOCVD -based method.
- •Si- doped GaN Epitxial Template on saphhire
•GaN (0001) thin film layer thickness 4.5 microns
- Dimensions
- 50.8 mm +/- 0.25 mm
- Resistivity
- < 5E-2 Ohm-cm
- Carrier Concentration
- 1E19 /cc
- FWHM of RC for the
symmetric (002) reflection
- ~ 250 arcsec;
- FWHM of RC for the
asymmetric (102) reflection
- ~ 350 arcsec
- The condition of front surface
- is as grown with Ga face
- (0001) miscut
- 0.2 ceg +/- 0.1 deg toward M plane
- thickness of saphire
- 430 um +/- 15 um
- one side polished with the condition of back surface is " as received "
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Working days : Monday to Saturday
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