GaN Epitxial Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. Epi GaN template is a cost effective way to replace GaN single crystal substrate
Specifications
•Sizes 2” Round •Dimensions 50.8mm +/- 0.25mm x 0.5 mm th •Substrate Sapphire, Orientation c-axis (0001) +/- 1.0 o •Conduction Type: n-type, •Resistivity < 0.5 Ohm-cm •Front Surface Finish (Ga Face) As-grown •Back Surface Finish Sapphire as-received finish •Useable Surface Area >90% •Edge Exclusion Area 1mm •Package Single Wafer Container •GaN layer thickness 30 microns , (+/- 10%)
