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VGF-Ge Wafer (100)  4" dia x 0.5 mm, 2SP, N type ( As- doped) with Res: 0.05-0.25 ohm.cm

VGF-Ge Wafer (100) 4" dia x 0.5 mm, 2SP, N type ( As- doped) with Res: 0.05-0.25 ohm.cm

기본 정보
Product Name VGF-Ge Wafer (100) 4" dia x 0.5 mm, 2SP, N type ( As- doped) with Res: 0.05-0.25 ohm.cm
Sale Price Call for Price
Product Code GEAsa100D05C2
Quantity 수량증가수량감소
상품 옵션
 
  •  Ge Wafer Specification
  • Growing Method
  • VGF
  • Orientation
  • (100) +/-0.5 Deg.
  • Wafer Size
  • 4" dia x 500 microns
  • Surface Polishing
  • Two sides epi polished
  • Surface roughness
  • < 8 A ( by AFM)
  • Doping
  • As- Doped
  • Conductor type
  • N-type
  • Resistivity
  • 0.05-0.25 ohm.cm
  • Ra(Average Roughness)
  • < 0.4 nm
  • Package
  • under 1000 class clean room
  •  Typical Properties
  • Structure
  • Cubic, a = 5.6754 Å
  • Density
  • 5.323 g/cm3 at room temperature
  • Melting Point
  • 937.4 oC
  • Thermal Conductivity
  • 640