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NONE
InP ,Growing Method: VGF(100) Sn doped,2 " x 0.35mm, wafer, 1sp 
- Size
- 2" diameter x 0.35 mm
- Resistivity
- (2.9 - 3.8)E-3 ohm.cm
- Mobility
- 2180 - 2350 cmE2/V.S
- Carrier Concerntration
- (6.9 - 9.9)E17 /cmE-3
- Ra(Average Roughness)
- < 0.4 nm
- EPI ready surface and packing
| Dopant |
Type |
Carrier
Concentration
(cm-3) |
Mobility
(cm2/V.Sec) |
Resistivity
(ohm-cm) |
EPD
(cm-2) |
| Undoped |
N |
0.8 ~ 2.0 x 1015 |
3600 ~ 4000 |
0.03 ~ 0.2 |
5 ~ 6 x 104 |
| Sn |
N |
0.5 ~ 1.0 x 1018
0.5 ~ 1.0 x 1018 |
200 ~ 2400
1500 ~ 2000 |
0.001 ~ 0.002
0.0025 ~ 0.007 |
3 ~ 5 x 104 |
| Zn |
P |
0.8 ~ 2.0 x 1018
2.5 ~ 4.0 x 1018 |
2500 ~ 3500
1300 ~ 1600 |
0.0025 ~ 0.006 |
1 ~ 3 x 104 |
| Fe |
Semi-Insulating |
0.1 ~ 1.0 |
2000 |
107 ~ 108 |
4 ~ 5 x 104 |
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Working days : Monday to Saturday
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