LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.
Specifications
Wafer Size
10mm x 10 mm x 0.45 mm thickness +/-0.05 mm,
Wafer Orientation
(100) +/-0.5 Deg
Polishing
One side CMP polished with free sub-surface damaged.
Surface finish (RMS or Ra)
< 10A
Packed
Under 1000 class clean room. (EPI ready) and in 100 grade plastic bag in a wafer container.
Typical Physical Properties
Crystal Structure
•Rhombohedral at 25 °C:
•a=5.357 Angstroms •c= 13.22 Angstroms
•Cubic at > 435 °C:
•a=3.821 Angstroms
Growth Method
Czochralski
Density
6.52 g/cm3
Melt Point
2080 °C
Thermal expansion
10 (x10-6/ °C)
Dielectric Constant
~ 25
Loss Tangent at 10 GHz
•~3x10-4 @ 300K, •~0.6 x10-4 @77K
Color and Appearance
Tan to Brown based on annealing condition Visible twins on polished substrate.
Chemical Stability
Insoluble in mineral acids at 25 °C and soluble in H3PO3 at> 150 °C
