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SiC - 4H (0001), 2" dia. x0.33 mm th., one side polished

SiC - 4H (0001), 2" dia. x0.33 mm th., one side polished

기본 정보
Product Name SiC - 4H (0001), 2" dia. x0.33 mm th., one side polished
Sale Price Call for Price
Product Code SC4Hz50D033C1
Quantity 수량증가수량감소
상품 옵션
 
  •  Specifications of Substrate
  • Orientation
  • <0001> ±30′
  • Edge Orientation
  • <11-20>±1° <10-10>±1°
  • Dimension
  • 2" +/-0.15 mm x 0.33 +/-0.05 mm
  • Polished
  • One side polished
  • Surface Roghness
  • < 5 A by AFM
  •  Typical Properties of Single Crystal SiC
  • Formula weight
  • 40.10
  • Unit Cell
  • Hexagonal
  • Lattice constant
  • •a = 3.07 A
    •c = 10.53 A
  • Stacking sequence
  • ABCA (4H)
  • Growth Technique
  • MOCVD
  • Orientation
  • on axis or 3.5o off (0001)
  • Polishing
  • Silicon face polished
  • Band Gap
  • 3.26 eV ( Indirect)
  • Conductivity type
  • N
  • Resistivity
  • 0.015~0.5 ohm-cm
  • Dielectric Constant
  • •e (11) = e (22) = 9.66
    •e (33) = 10.33
  • Thermal Conductivity @ 300K
  • 4 W / cm . K
  • Hardness
  • 9 Mohs
 
  

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