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Ge Wafer, N-type Sb-doped (100) 3" dia x 0.5 mm 1 side polished resistivity: 0.05-0.1 ohm-cm

Ge Wafer, N-type Sb-doped (100) 3" dia x 0.5 mm 1 side polished resistivity: 0.05-0.1 ohm-cm

기본 정보
Product Name Ge Wafer, N-type Sb-doped (100) 3" dia x 0.5 mm 1 side polished resistivity: 0.05-0.1 ohm-cm
Sale Price Call for Price
Product Code GESba76D05C1
Quantity 수량증가수량감소
상품 옵션
 
  •  Ge Wafer Specification
  • Growing Method
  • CZ
  • Orientation
  • (100) +/_0.5 Deg.
  • Flat
  • (110)
  • Wafer Size
  • 3" dia x 0.5 mm
  • Surface Polishing
  • one side epi polished
  • Surface roughness
  • < 8 A ( by AFM)
  • Doping
  • Sb-doped
  • Conductor type
  • N-type
  • Resistivity
  • 0.05-0.1 Ohms/cm
  • EPD
  • Package
  • under 1000 class clean room in wafer container
 
  

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