SiC Epi film with 3C structure grown by PECVD •Thickness: 3300 nm +/- 10% (can be grown up to 20 micron th; the price would be increased with the requested film thickness) •Orientation: 3C SiC (100) •Surface: CMP (film chemical mechanical polished) •Target doping level: 1.0E17 - 1.0E18 /cc (Available Doping range: 1E16 - 1E19 /cc) •Type and dopant: N type, Nitrogen doping
Silicon substrate
•Size: 100 mm dia x 0.525 mm thickness •Orientation: (100) •Type: N type / P doped (P type is available as well) •Resistivity: 1- 10 ohm.cm (resistivities is dependent on the doping level) •Polish: one side polished
Optional
•We can provide dicing service per customer request •Optional: you may need tool below to handle the wafer (click picture to order)
