SiC Epi film with 3C structure grown by PECVD •Thickness: 1500 nm +/- 10% (can be grown up to 20 micron th; the price would be increased with the requested film thickness) •Orientation: 3C SiC (100) •Surface: CMP (film chemical mechanical polished) on both sides with Ra < 5 Angstrom •Target doping level: < 1.0E16 /cc •Type and dopant: N type, Undoped
Silicon substrate
•Size: 100 mm dia x 0.525 mm thickness •Orientation: (100) •Type: P type / B doped (N type is available as well) •Resistivity: 1- 10 ohm.cm •Polish: both sides polished
Optional
•We can provide dicing service per customer request •Optional: you may need tool below to handle the wafer (click picture to order)
