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Si-doped GaN (0001) Epitaxial Template on Sapphire N-type, 4"x 5 micron,1sp 
- Si- doped GaN Epitxial Template on saphhire is made by HVPE -based method.
- •Si- doped GaN Epitxial Template on saphhire
•GaN (0001) thin film layer thickness 5 microns +/- 1 micron
- Dimensions
- 100 mm +/- 0.25 mm
- Conduction Type
- N-type,
with Carrier concentration is 5 x 1017 - 1 x 1018/cc
- Resistivity
- < 0.02 Ohm-cm
- Front surface
- Ga-face, as grown
- (0001) miscut
- 0.3 deg +/- 0.1 deg toward M plane
- one side polished with the condition of back surface is " as received "
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Working days : Monday to Saturday
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