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Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2" dia x 0.30 mm t, N type ,As-doped , 1 side polished,R:<0.005 ohm.cm 
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Research Grade , about 80 % useful area
- SiO2 layer on 2" Silicon wafer
- Oxide layer thickness
- 300 nm ( 3000 A ) +/-10%
- Growth method
- Dry oxidizing at 1000 oC
- Note
- customized oxide layer available upon request from 50 nm - 1000 nm
- Silicon Wafer Specifications
- Conductive type
- N type / As- doped
- Resistivity
- < 0.005 ohm-cm
- Size
- 50.8 diameter +/- 0.5 mm x 0.30 +/- 0.025 mm
- Optional
- you may need related product below to handle the wafer
( click picture to order )
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Working days : Monday to Saturday
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