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Thermal Oxide Wafer: 50 nm SiO2 Layer on Si (100), 2" dia x 0.40 mm t, P type , B-doped 1 side polished 
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Research Grade , about 80 % useful area
- SiO2 layer on 2" Silicon wafer
- Oxide layer thickness
- 50 nm ( 500 A ) +/-10%
- Growth method
- Dry oxidizing at 1000 oC
- Note
- customized oxide layer available upon request from 50 nm - 1000 nm
- Silicon Wafer Specifications
- Conductive type
- P type / Boron doped
- Resistivity
- 1 - 10 ohm-cm
- Size
- 50.8 diameter +/- 0.5 mm x 0.4 +/- 0.025 mm
- Optional
- you may need tool below to handle the wafer
( click picture to order )
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Working days : Monday to Saturday
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