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Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, P-type ,B-doped 1SP R:0.001- 0.002 ohm.cm
- •Research Grade , about 80 % useful area
•SiO2 layer on 4" Silicon wafer •Oxide layer thickness: 300 nm (3000 A) +/-10% •Growth method - Dry oxidizing at 1000oC •Refractive index - 1.455 •Note: customized oxide layer available upon request from 50 nm - 1000 nm
- Silicon Wafer Specifications
- Conductive type
- P-ype/ B-dped
- Resistivity
- 0.001- 0.002 ohm.cm
- Size
- 4"meter +/- 0.5 mm x 0.525 mmth
- Orientation
- (100) +/- 0.5o
- Optional
- you may need tool below to handle the wafer ( click picture to order )
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Working days : Monday to Saturday
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