| |
NONE
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t, P-type ,B-doped 1SP R:1-10 ohm.cm 
- •Research Grade , about 80 % useful area
•SiO2 layer on 3" Silicon wafer
•Oxide layer thickness: 300 nm (1000 A) +/-10%
•Growth method - Dry oxidizing at 1000oC
•Refractive index - 1.455
•Note: customized oxide layer available upon request from 50 nm - 1000 nm
- Silicon Wafer Specifications
- Conductive type
- P-type/ B-dped
- Size
- 3" +/- 0.5 mm in diameter x 0.5 mm +/- 0.05 mm th
- Optional
- you may need tool below to handle the wafer ( click picture to order )
|
|
|
Working days : Monday to Saturday
|
|
|
