MTI KOREA Battery
Battery R & D
- Coin Cell Preparation
- Cylindrical and Prismatic Cell Preparation
- Pouch Cell Preparation
- Battery Test Equipment
- Consumables for Battery R&D Synthesis
- Thermoelectric Materials
- Zinc-Ion Batteries
Crystal & Material
Crystals Substrates : A-Z
Ceramic Substrates : A-Z
Thin Film on Substrates : A-Z
Metallic substrate :A to Z
Nano Powder&Chemical
Target / Evaporation : A-Z
Thermal Processing
Smart Furnaces
- Muffle Furnaces (400-1800°C)
- Tube Furnaces (1- 7 Zones)
- CVD Furnace System
- Hi-Pressure & H2 Gas Furnaces & Hot Pressing
- RTP Furnaces
- Crystal Growth System
- Dry Ovens / Hot Plates
- Melting and Casting
Furnace Accessories
Plasma System
Plasma Sputtering & Cleaning
PECVD
Microspheres-Nanospheres
Inorganic
Organic
Magnetic
Radioactive
Size Standards
Sample Preparation & Analysis
Cutting / Dicing Saws
Polishing Machines
Lab Press & Rollers
Power & Slurry Mill / Mixer
Film Coating
Desktop Machine-shop
Material Analysis
TGA Analysis
Battery / Capacitor Analyzers
Desk-Top X-Ray Instruments
Digital Microscopes
Other Lab Equipment
Glove Box & Fume Hood
Digital Lab Balances
Plasma/UV-Zone Cleaners
Ultrasonics/Water Circulator
UV Equipment & Adhesives
Lab Ware / Accessory
Sample Handling
Gel Sticky Boxes
Membrane Film Boxes
Round Wafer Carriers
IC Tray & Plastic Boxes
Vacuum Pen & Tweezers
Knowledge Center
등록 제품 : 88개
-조건선택- -조건선택-
상품명 : ITO Coated (250 nm) Glass Substrate: 100mm x 100 mm x 0.7 mm, 6-7 ohm/sq - ITO-10010007-7H
상품명 : Epi: Lattice matched p-type InGaAs:Zn[100], on un-doped InP thickness: 1.0um(±20%).2"x0.35mm,1sp
상품명 : Epi: Lattice matched N-type InGaAs:Si[100], on un-doped InP thickness: 1.0um(±20%).2"x0.35mm,1sp
상품명 : 2" dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD (eg InP:Fe) 2" dia x0.35mm,2sp,Film:500 nm
상품명 : VGF-GaAs (100) orientation, undoped, Semi-insulating, 1sp, 3" dia x 0.5mm
상품명 : GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.6 mm, 1SP
상품명 : CdZnTe (111)B, with Zn concentration around 14% , P type, 10x10x1.0mm 1sp R:>1E6 ohm.cm
상품명 : CdTe (111)B, Undoped ,P-type 10x10x1.0 mm, 2 Side polished
상품명 : CdS Random orientation 5 mm X 5 mm x 1.0 mm , 2 Sides polished
상품명 : CdS Random orientation 10 mm X 10 mm x 1.0 mm , 2 Sides polished
상품명 : VGF-GaAs (100) orientation, undoped, Semi-insulating, 2sp, 3" dia x 0.5mm
상품명 : GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 2"D x0.5 mm, 2SP