|
N Type Ge (100)
Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 10-20 ohm-cm
- Orientation
- (100) +/_0.5 Deg.
- Wafer Size
- 2" dia x 500 microns
- Surface Polishing
- Two sides epi polished
- Surface roughness
- RMS or Ra< 5 A ( by AFM)
- Resistivity
- 10 - 20 Ohms/cm
- Package
- under 1000 class clean room
- Structure
- Cubic, a = 5.6754 Å
- Density
- 5.323 g/cm3 at room temperature
|
|
|
![](https://cafe24.poxo.com/ec01/mtikr02/MkCj60lH04MGF8dcvBKuW8MJp41WTuSQWh3SEwjm5Sau9NBiveVPO8uec9IlMkfRSKVuToqPG7jifpXONG/y+A==/_/web/smh/layout_Ver2/bottom/logoBottom.png) Working days : Monday to Saturday
|
|
|