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N Type Ge (100)
Ge Wafer (100) +/-2 Deg. 2" dia x 0.5 mm, 1SP, N type ( Sb doped), resistivities:0.1-1.0 ohm-cm
Specification
• Growing Method: CZ • Orientation: (100) +/-2 Deg. • Wafer Size: 2" dia x 500 microns • Surface Polishing: one side epi polished • Surface roughness: ~10 A ( by AFM) • Doping: Sb Doped • Conductor type: N-type • Package: under 1000 class clean room
Typical Properties
- • Structure: Cubic, a = 5.6754 A
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
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Working days : Monday to Saturday
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