| |
N Type Ge (100)
Ge Wafer (100) 2" dia x 1.0 mm, 1SP, N type ( Sb doped), resistivities: 0.02 ohm-cm
Specification
• Growing Method: CZ • Orientation: (100) +/-0.5 Deg. • Wafer Size: 2" dia x 1000 microns • Surface Polishing: one side epi polished • Surface roughness: < 8 A ( by AFM) • Doping: Sb Doped • Conductor type: N-type • Resistivity: 0.02 Ohms/cm • EPD: • Package: under 1000 class clean room
Typical Properties
- • Structure: Cubic, a = 5.6754 Å
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
|
|
|
Working days : Monday to Saturday
|
|
|
