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N Type Ge (100)
Ge Wafer (100) +/- 0.7 degree 2" dia x 0.5 mm, 2SP, N type ( Sb doped), R:>40 ohm-cm
Specification
Growing Method: CZ Orientation: (100) +/_0.7 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: Two sides epi polished 8Surface roughness: RMS or Ra:~ 10 A ( by AFM) Doping: Sb Doped Conductor type: N-type Package: under 1000 class clean room
Typical Properties
- • Structure: Cubic, a = 5.6754 Å
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
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