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M-Plane (1-100)
Al2O3-Sapphire Wafer, M-plane 1"Dia x 0.5 mm 2SP
- Orientation
- M <10-10> +/- 0.5 o
- Wafer size
- 2" dia x 0.4 - 0.5 mm thickness
- Polished surface
- Two sidesEPI polished via a special CMP procedure.
Ra <5A
- Package
- Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.
- Crystal Structure
- Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
- Melting Point
- 2040 degree C
- Thermal Expansion
- 7.5 x 10-6 (/ oC)
- Thermal Conductivity
- 46.06 @ 0 oC
25.12 @ 100 oC,
12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant
- ~ 9.4 @ 300K at A axis ~ 11.58 @ 300K at C axis
- Loss Tangent at 10 GHz
- < 2 x 10-5 at A axis ,
< 5 x 10-5 at C axis
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Working days : Monday to Saturday
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