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GaAs (100) Te-doped
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade
- GaAs single crystal wafer, PRIME Grade
- Orientation
- (100) 2 degree OFF Toward [101] +/- 0.5 deg
- Polishing
- One side polished
- Carrier Concentration
- (0.1 - 0.6) x 1018 /cm3
- Mobility
- 3500 - 3600 cm2/V.S
- Resistivity
- (2.9 - 10.7) E-3 ohm-cm
- Note
- EPI polishing : RMS < 5 Angstrom
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Working days : Monday to Saturday
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