|
GaAs(100) Cr-doped
GaAs , Growing Method: VGF(100) Cr- doped, SI-type, 2" dia x 0.35mm, 2sp
- GaAs single crystal wafer
- Polishing
- Two sides polished
- Ra(Average Roughness)
- < 0.4 nm
- Mobility
- 5560 - 5950 cm2/V.S
- Resistivity
- (0.8-1.3) E8 ohm.cm
- EPI ready surface and packing
|
|
|
Working days : Monday to Saturday
|
|
|