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GaAs(100) Si- doped
GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3
- GaAs single crystal wafer
- Polishing
- two sides polished
- Carrier Concentration
- (3.8 - 6.2) x 1016 /cm3
- Mobility
- 3450 - 3890 cm2/V.S
- Resistivity
- (2.74 - 4.24) E-2 ohm.cm
- Ra(Average Roughness)
- < 0.4 nm
- EPI ready surface and packing
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Working days : Monday to Saturday
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