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GaAs (110)
GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3" dia x 0.5mm, 1sp
- GaAs single crystal wafer
- Primary Flat
- EJ (1-10) +/- 0.5 degree
- Secondary Flat
- EJ (001) +/- 0.5 degree
- Polishing
- One side polished
- Doping
- Un-doped, Semi-Insulating
- Carrier Concentration
- N/A
- Mobility
- 4570 - 5110 cm2/V.S
- Resistivity
- (2.6 - 3.8) x 108 ohm.cm
- EPI ready surface and packing
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Working days : Monday to Saturday
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