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GaAs (110)
GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp (부가세 별도)
- GaAs single crystal wafer
- Polishing
- Two sides polished
- Carrier Concentration
- (1.3 - 1.4)E19/cm3
- Ra(Average Roughness)
- < 0.4 nm
- Resistivity
- (6.1 - 6.6) x 10-3 ohm.cm
- EPI ready surface and packing
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Working days : Monday to Saturday
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