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GaAs (110)
GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 1sp,
- GaAs single crystal wafer
- Polishing
- one side polished
- Conductor type
- SI ( semi-insulating )
- Carrier Concentration
- (0.2 - 5.5) E8/cm3
- Mobility
- 3830 - 5270 cm2/V.S
- Resistivity
- (2.2 - 2.3) E8 ohm.cm
- Ra(Average Roughness)
- < 0.4 nm
- EPI ready surface and packing
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Working days : Monday to Saturday
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