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GaAs(111)
GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625mm, 2sp
- GaAs single crystal wafer
- Primary Flat
- EJ(0-11) +/- 0.5 deg
- Polishing
- Two sides polished
- Conductor type
- Semi-Insulating
- Resistivity
- (2.0 - 2.1) E8 ohm.cm
- Carrier Concentration
- N/A
- Mobility
- 5030 - 5240 cm2/V.S
- Ra(Average Roughness)
- < 0.4 nm
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