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GaAs(111)
GaAs, Growing Method: VGF ,(111)B , Zn-doped, P-type, 2" dia x 0.5mm, 2sp
- GaAs single crystal wafer
- Polishing
- two sides polished
- Resistivity
- (8.8 - 9.8) E-3 ohm.cm
- Carrier Concentration
- (7.2 - 8.5) E18 cm-3
- Ra(Average Roughness)
- < 0.4 nm
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Working days : Monday to Saturday
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