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InSb Ge-doped
InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished
- 10x10x0.45 mm InSb wafer (P type, Ge doped)
- Orientation
- <100> +/-0.2 o with two reference flats
- Polishing
- one-side side polishd ( back side etched )
- Packing
- Sealed under nitrogen with single wafer comtainer in 1000 class clean room
- Orientation
- (100) +/- 0.2 o
- Carrier Concentration
- (0.05 - 0.50)E17@77K
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