Si 4" P-type Doped

Si Wafer (111) miscut  0+/-0.5 degree,  4 " dia x 0.525 mm,  1SP,  P Type, B doped, Resistivities:1-10 ohm-cm (부가세 별도)

Si Wafer (111) miscut 0+/-0.5 degree, 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities:1-10 ohm-cm (부가세 별도)

기본 정보
Product Name Si Wafer (111) miscut 0+/-0.5 degree, 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities:1-10 ohm-cm (부가세 별도)
Sale Price 75,000원
Product Code SIBc101D05C1
Quantity 수량증가수량감소
상품 옵션
 
  •  Si Wafer
  • Single crystal
  • Si,
  • Conductivity
  • P type ( B doped )
  • Resistivity
  • 1-10 ohm-cm
  • Size
  • 4" diameter x 0.525 mm
  • Orientation
  • (111) miscut 0+/-0.5 degree,
  • Polish
  • One side polished
  • Surface roughness
  • < 5A
  • Optional
  • you may need tool below to handle the wafer
    ( click picture to order )