Si 4" P-type Doped

Si Wafer (111)  4 +/- 0.5 degree off  , 4 " dia x 0.5 mm,  1SP, P Type, B doped, resistivity:  0.004-0.006 ohm-cm (부가세 별도)

Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm (부가세 별도)

기본 정보
Product Name Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm (부가세 별도)
Sale Price 88,000원
Product Code SiBc(4)101D05C1
Quantity 수량증가수량감소
상품 옵션
 
  •  Si Wafer
  • Single crystal
  • Si, (CZ)
  • Conductivity
  • P type ( B - doped )
  • Resistivity
  • 0.004-0.006 ohm-cm
  • Size
  • 4" in diameter x 0.5 mm
  • Orientation
  • (111) 4 +/- 0.5 degree off
  • Polish
  • One side polished
  • Surface roughness
  • < 5A
  • Optional
  • you may need tool below to handle the wafer
    ( click picture to order )