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GaAs(100) Si- doped

 
  2. GaAs(100)
  3. GaAs(100) Si- doped
 
 
GaAs , Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp,Carrier Concentration: (1.4-3.96) x 10^18 /cm^3

GaAs , Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp,Carrier Concentration: (1.4-3.96) x 10^18 /cm^3

기본 정보
Product Name GaAs , Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp,Carrier Concentration: (1.4-3.96) x 10^18 /cm^3
Sale Price Call for Price
Product Code GASi76D0625C2-VGF-US
Quantity 수량증가수량감소
Stock 1n Stock
상품 옵션
 
  •  GaAs single crystal wafer
  • Growing Method
  • VGF
  • Orientation
  • (100)
  • Size
  • 3" dia x 0.625 mm
  • Polishing
  • two sides polished
  • Doping
  • Si doped
  • Conductor type
  • S-C-N
  • Carrier Concentration
  • (1.4 - 3.96) x 1018/cm3
  • Mobility
  • 1420 - 2090 cm2/V.S
  • Resistivity
  • (1.1 - 2.14) E-3 ohm.cm
  • EPD
  • < 1000 cm2
  • Ra(Average Roughness)
  • < 0.4 nm
  • EPI ready surface and packing
 
  

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