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Si+SiO2 +Ti( or TiO2)+Pt (111)...
SiO2+Ti+Pt(111) thin film on Si substrate ,4"x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm)
- Silicon Wafer Specifications
- Resistivity
- 1 - 20 ohm.cm
- Substrate Size
- 4" diameter +/- 0.5 mm x 0.525 mm
- Surface roughness
- < 20 A RMS
- Maximum Thermal Budget of Pt film
- 700 - 800 degree C
- Optional
- you may need tool below to handle the wafer
( click picture to order )
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