Ag/Cr coated SiO2/Si substrate , 4" x 0.525 mm, 1sp P-type B-doped, •Ag(111) = 150 nm •Cr = 20 nm •SiO2 = 300 nm •Si(100) P type B doped ~525 um Prime Grade
Resistivity
< 0.005 ohm.cm
Substrate Size
4" diameter +/- 0.5 mm x 0.5 mm
Polish
one side polished
Surface roughness
< 5A
Optional : you may need tool below to handle the wafer
