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A-plane (11-20)
Al2O3 - Sapphire Wafer 100 mm x0.5 mm, A plane (11-20), 1 SP
Features: • A plane (11-20) sapphire wafer
• Wafer size: 100 mm dia x 0.5 mm thickness • Orientaion: A plane <11-20> ori.( +/- 0.5o) with Standard Flat • Polished surface: Wafer surface is EPI polished via a special CMP procedure • Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties: • Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms • Melting Point: 2040 degree C • Density: 3.97 gram/cm2 • Growth Technique: CZ • Crystal Purity: >99.99% • Hardness: 9 ( mohs) • Thermal Expansion: 7.5x10-6 (/ oC) • Thermal Conductivity: 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) • Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis • Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
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