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Al2O3- Sapphire Wafer, C-plane (0001), 10x10x0.1mm, 1SP - ALC101001S1

Al2O3- Sapphire Wafer, C-plane (0001), 10x10x0.1mm, 1SP - ALC101001S1

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Product Name Al2O3- Sapphire Wafer, C-plane (0001), 10x10x0.1mm, 1SP - ALC101001S1
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Product Code ALC101001S1
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Features:

  •      •  Sapphire substrate is the popular substrates for III-V nitrides,  superconductor and magnetic epi film
            due to less mis-matched lattice and stable chemical and physical properties
  •      •  Wafer size: 10 x 10 x 0.1 mm thick
  •      •  Orientation: <0001> +/-0.5
  •      •  Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A
  •      •  one side polished
  •      •  Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container

Typical Properties:

  •      •  Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
  •      •  Melting Point: 2040 degree C
  •      •  Density: 3.97 gram/cm2 
  •      •  Growth Technique: CZ
  •      •  Crystal Purity:  >99.99%
  •      •  Hardness: 9 ( mohs)
  •      •  Thermal Expansion: 7.5x10-6 (/ oC)
  •      •  Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 
  •      •  Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
  •      •  Loss Tangent at 10 GHz: < 2x10-5  at A axis <5 x10-5  at C axis
 Please click here for detail data