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Round Al2O3 (0001) Wafer 10mm, 1" - 4"
Al2O3- Sapphire Wafer, C-plane (0001), 3" Dia.x0.43mm , 2SP
Features:
- • Sapphire (single crystal of Al2O3 ) is being used extensively as a substrate for
III-V nitrides and for many other epitaxial films - • Orientation: C-axis[0001]( +/-0.3 Deg) with Standard Flat
- • Diameter: 3" +/- 0.3mm
- • Thickness: 430um +/- 25 um
- • Major Flat: A-axis[11-20]+/-0.5o
- • Surface Finish: Front sides: Epi- polished Ra<0.5nm (by AFM)
- • Back side: Epi- polished , <0.5nm(by AFM)
- • TTV: < =15um
- • BOW: <=15um
- • WARP: <=15um
- • Polished surface: Two side epi polished by special CMP technology
- • Package: Each wafer is packed in 1000 class clean room
Typical Properties: • Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms • Melting Point: 2040 degree C • Density: 3.97 gram/cm2 • Growth Technique: CZ • Crystal Purity: >99.99% • Hardness: 9 ( mohs) • Thermal Expansion: 7.5x10-6 (/ oC) • Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) • Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis • Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis Please click here for detail data
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