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Round Al2O3 (0001) Wafer 10mm, 1" - 4"

 
  2. C-Plane (0001)
  3. Round Al2O3 (0001) Wafer 10mm, 1" - 4"
 
 
Al2O3 single crystal substrate , 100mm Dia. x 0.65mm 2sp - ALC100D065C2

Al2O3 single crystal substrate , <0001> 100mm Dia. x 0.65mm 2sp - ALC100D065C2

기본 정보
Product Name Al2O3 single crystal substrate , <0001> 100mm Dia. x 0.65mm 2sp - ALC100D065C2
Sale Price Call for Price
Product Code ALC100D065C2
Quantity 수량증가수량감소
상품 옵션
 
Features:
  •      •  Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for
             III-V nitrides and for many other epitaxial films
  •      •  Orientation: C-plane off 0.2+/- 0.1o to M-plane leftwards from the Primary; 0 +/- 0.1o off to A-plane
  •      •  Diameter: 100mm+/-0.1
  •      •  Thickness: 0.65mm +/-0.025
  •      •  Major Flat: A-axis[11-20]+/-0.3o
  •      •  Major Flat Length: 32.5mm +/- 2.5mm
  •      •  Surface Finish: two sides Epi- polished Ra<=0.3nm(by AFM)
  •      •  TTV: <= 15um
  •      •  Warp: <= 20um
  •      •  Bow: <= 20um
  •      •  Package: Each wafer is packed in 1000 class clean room 


Typical Properties:

  •      •  Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
  •      •  Melting Point: 2040 degree C
  •      •  Density: 3.97 gram/cm2 
  •      •  Growth Technique: CZ
  •      •  Crystal Purity:  >99.99%
  •      •  Hardness: 9 ( mohs)
  •      •  Thermal Expansion: 7.5x10-6 (/ oC)
  •      •  Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 
  •      •  Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
  •      •  Loss Tangent at 10 GHz: < 2x10-5  at A axis,  <5 x10-5  at C axis

 Please click here for detail data
 
  

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