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M-Plane (1-100)
Al2O3- Sapphire Wafer, M Plane 2"Dia x0.5 mm wafer, 1SP
Specifications: • Orientation: M <10-10> +/-0.5 o • Wafer size: 2" dia x 0.4 - 0.5 mm thickness • Polished surface: One sideEPI polished via a special CMP procedure. Ra <5A • Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.
Typical Properties: • Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms, • Melting Point: 2040 degree C • Density: 3.97 gram/cm2 • Growth Technique: CZ • crystal purity: >99.99% • Hardness: 9 ( mohs) • Thermal Expansion: 7.5x10-6 (/ oC) • Thermal Conductivity: 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) • Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis • Loss Tangent at 10 GHz: < 2x10-5 at A axis , <5 x10-5 at C axis
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