M-Plane (1-100)

Al2O3- Sapphire Wafer, M Plane, 2"Dia x0.5mm, 2SP - ALM50D05C2

Al2O3- Sapphire Wafer, M Plane, 2"Dia x0.5mm, 2SP - ALM50D05C2

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Product Name Al2O3- Sapphire Wafer, M Plane, 2"Dia x0.5mm, 2SP - ALM50D05C2
Sale Price Call for Price
Product Code ALM50D05C2
Quantity 수량증가수량감소
상품 옵션
 

Features:

  •      •  M <10-10> ori. sapphire wafer is being used extensively as a substrate for III-V nitrides and
            magnetic epitaxial films due to its better lattice mismatch
  •      •  Wafer size: 2" dia x 0.5 mm thickness 
  •      •  Orientaion: M plane <10-10>orn +/-0.5 Deg
  •      •  Polished surface:   Wafer surface is EPI polished via a special CMP procedure. Price listed here is for
            one side polished
  •      •  Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container

Typical Properties:

  •      •  Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
  •      •  Melting Point: 2040 degree C
  •      •  Density: 3.97 gram/cm2 
  •      •  Growth Technique: CZ
  •      •  Crystal Purity:  >99.99%
  •      •  Hardness: 9 ( mohs)
  •      •  Thermal Expansion: 7.5x10-6 (/ oC)
  •      •  Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 
  •      •  Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
  •      •  Loss Tangent at 10 GHz: < 2x10-5  at A axis <5 x10-5  at C axis

 Please click here for detail data