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M-Plane (1-100)
Al2O3- Sapphire Wafer, M Plane (10-10) 3"Dia x 0.5 mm wafer, 1SP
Specifications:
• Orientation: M Plane, <10-10> +/-0.5`o • Wafer size: 3" dia x 0.5 mm thickness • One side Epi polished - • Polished surface: Wafer surface is EPI polished via a special CMP procedure. Ra <5A
• Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag
with wafer container
Typical Properties:
• Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms • Melting Point: 2040 degree C • Density: 3.97 gram/cm2 • Growth Technique: CZ • Crystal Purity: >99.99% • Hardness: 9 ( mohs) • Thermal Expansion: 7.5x10-6 (/ oC) • Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) • Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis • Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
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Working days : Monday to Saturday
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