Bi2Te3

Bi2Te3 Highly Oriented Crystal Substrate (001) irregular shape(about 5x5x0.1 mm) as Cleaved - BT-050501

Bi2Te3 Highly Oriented Crystal Substrate (001) irregular shape(about 5x5x0.1 mm) as Cleaved - BT-050501

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Product Name Bi2Te3 Highly Oriented Crystal Substrate (001) irregular shape(about 5x5x0.1 mm) as Cleaved - BT-050501
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Product Code BTb050501US
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상품 옵션
 
Bismuth telluride crystal substrate is highly oriented crystal ( not  single crystal ), which is a narrow gap layered semiconductor with a hexagonal structure.  The valence and conduction band structure can be described as a many-ellipsoidal model with 6 constant-energy ellipsoids that are centered on the reflection planes.  General thermoelectric materials, thermoelectric factor is currently the largest pure-phase block; mechanical dissociation can get high-quality topological insulator material.
  
Specifications:

  •      •  Structure: Hexagonal, group 166,R-3M
  •      •  Grown method: High-pressure vertical Bridgman
  •      •  Lattice constant: a=4.38A    c=30.5A
  •      •  Substrate orientation: highly oriented layer structure along <0001>
  •      •  Surface: as Cleaved
  •      •  Purity: 99.999%, atomic ratio,
  •      •  MeltingPoint: 585 oC
  •      •  Resistivity : 0.1-5 mohm. cm
  •      •  Mobility : 3000 cm2 / V.s 
  •      •  General Size: irregular shape,about 5 mm x 5 mm x 0.1mm,
  •      •  Packing: packed in plastic bag with vacuum