Bi2Te3

Bi2Te3 Highly Oriented Crystal Substrate (0001) irregular shape(about 10x10x0.1 mm) as Cleaved

Bi2Te3 Highly Oriented Crystal Substrate (0001) irregular shape(about 10x10x0.1 mm) as Cleaved

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Product Name Bi2Te3 Highly Oriented Crystal Substrate (0001) irregular shape(about 10x10x0.1 mm) as Cleaved
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Product Code BTb101001US
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상품 옵션
 
Bismuth telluride crystal substrate is highly oriented crystal ( not single crystal ), which is a narrow gap layered semiconductor with a hexagonal structure.  The valence and conduction band structure can be described as a many-ellipsoidal model with 6 constant-energy ellipsoids that are centered on the reflection planes.  General thermoelectric materials, thermoelectric factor is currently the largest pure-phase block; mechanical dissociation can get high-quality topological insulator material.
 
 
Specifications:

  •      •  Structure:  Hexagonal, group 166,R-3M
  •      •  Grown Method :  High-pressure vertical Bridgman
  •      •  Lattice constant:  a=4.38A    c=30.5A
  •      •  Substrate orientation:  highly oriented layer structure along <0001>
  •      •  Surface:  as Cleavaged
  •      •  Purity: 99.999%, atomic ratio
  •      •  Melting Point:  585 oC
  •      •  Resistivity : 0.1-5 mohm. cm
  •      •  Mobility : 3000 cm2 / V.s 
  •      •  General Size: irregular  shape(~  10 mm x 10 mm x 0.1mm)
  •      •  Packing:  packed in plastic bag with vacuum