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GaAs(100) Si- doped
GaAs , Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp,Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 (부가세 별도)
GaAs single crystal wafer
• Growing Method: VGF • Orientation: (100) • Size: 4" dia x 0.625 mm • Polishing: two sides polished • Doping: Si doped • Conductor type: S-C-N • Carrier Concentration: (1.47-3.78) x 10^18/cm^3 • Mobility: (1600 - 2130) cm^2/V.S • Resistivity: (1.03 - 2.01) E-3 ohm.cm
• EPD: < 5000cm^2 - • Ra(Average Roughness) : < 0.4 nm
- • EPI ready surface and packing
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Working days : Monday to Saturday
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